Product Summary

The BSM50GX120D is an IGBT Power Module.

Parametrics

BSM50GX120D absolute maximum ratings: (1)Collector-emitter voltage VCE: 1200 V; (2)Collector-gate voltage, VCGR: 1200 V; (3)Gate-emitter voltage VGE: ± 20V; (4)DC collector current, IC: 78A; (5)Pulsed collector current, tp = 1 ms, ICpuls: 156A; (6)Power dissipation per IGBT: 400W; (7)Chip temperature Tj: + 150 ℃; (8)Storage temperature Tstg: -55 to + 150℃; (9)Thermal resistance, chip case RthJC≤ 0.3 K/W; (10)Diode thermal resistance, chip case RthJCD≤ 0.6K/W; (11)Insulation test voltage, t = 1min. Vis: 2500 Vac; (12)Creepage distance: 20 mm; (13)Clearance: 11mm; (14)DIN humidity category, DIN 40 040: F sec.

Features

BSM50GX120D features: (1)Half-bridge; (2)Including fast free-wheeling diodes; (3)Package with insulated metal base plate.

Diagrams

BSM50GX120D pin connection

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
BSM50GX120DN2
BSM50GX120DN2
Infineon Technologies
IGBT Modules
Data Sheet
0-1: $63.00
1-10: $57.00
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(USD)		 Quantity
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Data Sheet
0-1: $35.08
1-10: $31.58
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Data Sheet
0-1: $36.45
1-5: $34.63
5-10: $32.81
10-50: $30.13
BSM50GB120DN2
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Infineon Technologies
IGBT Modules 1200V 50A DUAL
Data Sheet
0-1: $44.28
1-5: $42.07
5-10: $39.85
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Data Sheet
0-1: $58.01
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Data Sheet
0-1: $25.46
1-10: $22.92
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Data Sheet
0-1: $63.47
1-10: $57.12