(China (Mainland))
Product Summary
The FQD12N20L N-Channel enhancement mode power field effect transistor is produced using Fairchild’s proprietary, planar stripe, DMOS technology.
Parametrics
Absolute maximum ratings: (1)Drain-Source Voltage: 200 V; (2)Drain Current: Continuous (TC = 25℃): 9.0 A, Continuous (TC = 100℃): 5.7 A; (3)Drain Current - Pulsed: 36 A; (4)Gate-Source Voltage: ± 20 V; (5)Single Pulsed Avalanche Energy: 210 mJ; (6)Avalanche Current: 9.0 A; (7)Repetitive Avalanche Energy: 5.5 mJ; (8)Peak Diode Recovery dv/dt: 5.5 V/ns; (9)Power Dissipation (TA = 25℃) *: 2.5 W; (10)Power Dissipation (TC = 25℃): 55 W, Derate above 25℃: 0.44 W/℃; (11)Operating and Storage Temperature Range: -55 to +150 ℃; (12)Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds: 300 ℃.
Features
Features: (1)9.0A, 200V, RDS(on) = 0.28Ω @ VGS = 10 V; (2)Low gate charge ( typical 16 nC); (3)Low Crss ( typical 17 pF); (4)Fast switching; (5)100% avalanche tested; (6)Improved dv/dt capability; (7)Low level gate drive requirement allowing direct opration from logic drivers.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
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 FQD12N20L |
Other |
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Data Sheet |
Negotiable |
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FQD12N20LTF |
Fairchild Semiconductor |
MOSFET 200V N-Ch QFET Logic Level |
Data Sheet |
Negotiable |
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FQD12N20LTM |
Fairchild Semiconductor |
MOSFET 200V N-Ch QFET Logic Level |
Data Sheet |
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FQD12N20LTM_F085 |
Fairchild Semiconductor |
MOSFET Trans MOS N-Ch 200V 9A 3-Pin 2+Tab |
Data Sheet |
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