Product Summary

The UPD65636GB-Y12-9EU is an ultra-high performance, sub-micron effective channel length CMOS product which is created for high-integration ASIC applications. It includes 1.0-micron silicon-gate CMOS technology and three-layer and two-layer metallization.

Parametrics

Absolute maximum ratings: (1)power supply voltage, VDD: -0.5 to 6.5 V; (2)input/output voltage, VI/VO: -0.5 V to VDD+0.5 V; (3)latch-up current, ILATCH: >1 A typ; (4)output current, IO: 4.5mA drive: 10mA, 9mA drive: 20 mA; (5)operating temperature: -40 to +85℃; (6)storage temperature: -65 to 150℃.

Features

Features: (1)channellessm 1 μm CMOS high-density architecture; (2)variable output drive: 4.5, 9.0, 13.5, or 18.0 mA; (3)slew rate output buffers; (4)free size memory blocks to 64 kbytes; (5)powerful block library with more than 400 macros; (6)3V characterized block library; (7)new 0.65 mm 184-pin plastic QFP for cost effective designs; (8)high I/O to gate ratio for CMOS-6V and CMOS-6X.

Diagrams

UPD61051
UPD61051

Other


Data Sheet

Negotiable 
UPD6121
UPD6121

Other


Data Sheet

Negotiable 
UPD6124A
UPD6124A

Other


Data Sheet

Negotiable 
UPD6125A
UPD6125A

Other


Data Sheet

Negotiable 
UPD6132
UPD6132

Other


Data Sheet

Negotiable 
UPD6133
UPD6133

Other


Data Sheet

Negotiable